📋 Workflow
Full workflow, products add-to-cart directly1
Substrate cleaning
30 minUltrasonicate the substrate in acetone, IPA and DI water, then blow dry with nitrogen.
💡 Tip Plasma treatment after cleaning improves film adhesion.
⚠️ Caution Residual organics on the substrate cause film delamination.
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2
Precursor preparation
20 minLoad the precursor source (liquid precursor or solid target) and set temperature and flow.
💡 Tip Precursor purity ≥99.999% to avoid film contamination.
⚠️ Caution Volatile precursors are toxic; handle in a fume hood or closed line.
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3
Evacuate chamber
40 minPump down to base vacuum with mechanical + turbo pumps to remove residual gas.
💡 Tip Lower base vacuum yields higher film purity.
⚠️ Caution Stop pumps and vent slowly before breaking vacuum to prevent backstreaming.
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4
Film deposition
1.5 hIntroduce precursor or strike plasma, control deposition rate and time to build the film.
💡 Tip Calibrate deposition rate first, then compute time by thickness.
⚠️ Caution Non-uniform film often comes from uneven flow/temperature; preheat the chamber.
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5
Annealing & characterization
1 hAnneal in inert atmosphere to improve crystallinity; measure thickness, conductivity, XRD.
💡 Tip Annealing temperature and atmosphere determine film phase and properties.
⚠️ Caution Rapid annealing causes stress and cracking.
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⚠️ 5 Common Beginner Mistakes
- ① Poor substrate cleaning: weak film adhesion
- ② Insufficient vacuum: film contains oxygen/impurities
- ③ Unstable precursor flow: non-uniform thickness
- ④ Excessive annealing: film cracking or phase change
- ⑤ Uncontrolled thickness: no deposition rate calibration
❓ FAQ
+How to improve poor film adhesion?
Improve substrate cleaning, plasma pretreatment, and optimize deposition temperature and annealing.
+What causes non-uniform film thickness?
Check flow/temperature uniformity, substrate position, and deposition rate.
+How to choose between CVD and ALD?
Choose ALD for ultrathin conformal films (high aspect ratio), CVD for high deposition rate.